DRAM MODULE

Pom nyob rau hauv 2008, Peb pab pawg tuam txhab tau nyob rau hauv OEM flash nco cheeb tsam yuav luag 15years, OEM DRAM Module, OEM SSD, OEM USB FLASH DRIVE, OEM TF CARD, raws li ib tug kws OEM flash nco tsum, Peb mob siab rau muab kev pab cuam rau loj hom neeg muas zaub , cov tub luam tseem ceeb thiab cov neeg xa khoom hauv lub tebchaws. Txhawm rau txhawb cov tub lag luam zoo dua thiab cov neeg xa khoom hauv lub tebchaws, peb muaj cov khoom npaj tsis tu ncua hauv HongKong thiab ShenZhen, peb muag ntau dua 1 lab pcs txhua lub hlis.

Xa kev nug

Peb tsuas yog txhawb nqa DDR3, DDR4 rau cov neeg siv khoom uas tseem ua lag luam SSD, rau cov neeg siv khoom lag luam lossis cov chaw tsim khoom siv computer, peb kuj muaj LPDDR uas tam sim no tsuas yog txhawb nqa Tuam Tshoj Inland loj xov tooj thiab IPAD cov neeg siv khoom thiab qee cov neeg siv khoom ntse. Nrog nws cov kev ua haujlwm siab thiab kev siv qis, nws zoo rau cov khoom siv me me ntse.

Dram/LPDDR Technical Parameter:

PRODUCT CATEGORY	SPECIFICATION / MAX DATA RATE	DENSITY	Ntim	Kev ua haujlwm KUB
DRAM	DRAM D3	2 Gb / 4 Gb	FBGA 96 Pob	25 ° ~ 85 ° C
DRAM	DRAM D4	4 Gb / 8 Gb	FBGA 96 Pob
DRAM Module	U-DIMM	4GB / 8GB / 16GB / 32GB nco	/	0 degree - 85 degree
	SO-DIMM
	R-DIMM	8GB / 16GB / 32GB nco	/	0 degree - 85 degree
LPDDR	LP DDR 4	2GB / 3GB / 4GB / 6GB / 8GB muaj	200 Pob	0 degree - 70 degree

Specifications:

Khoom Model No.	Specification	Qhov ntom	Dimension	Pob
DRAM U-DIMM /SO-DIMM	8GB X8/X16 1.2V * 2666/2933/3200Mbps	8gb ua	7.5 x 13.3 hli (W x L)	78 Pob / 96 Pob
DRAM U-DIMM /SOD-IMM	16GB X8/X16 1.2V * 2666/2933/3200Mbps	16 GB ntawm	10.3 x 11 mm (W x L)	78 Pob / 96 Pob
DRAM U-DIMM /SO-DIMM	32GB X8/X16 1.2V * 2666/2933/3200Mbps	32 GB ua	10.3 x 11 mm (W x L)	78 Pob / 96 Pob

Module muaj:

Ntu 1)	Qhov ntom	Lub koom haum	Kev sib xyaw ua ke	Tus naj npawb ntawm Qib	Qhov siab
4 GB UDIMM	4 GB ua	5 12x64	512x16x 4	1	31.25mm 3
8 GB UDIMM	8gb ua	1 tx64	1 tx8*8	1	31.25mm 3
16 GB UDIMM	16 GB ntawm	2 tx64	Txd8 * 16	2	31.25mm 3
4GB SODIMM	4 GB ua	5 12x64	512x16x 4	1	30 mm
8GB SODIMM	8gb ua	1 tx64	1 tx8*8	1	30 mm
16 GB SODIMM	16 GB ntawm	2 tx64	Txd8 * 16	2	30 mm

CEEB TOOM:

1) (2133Mbps 15-15-15) / (2400Mbps 17-17-17) / (2666Mbps 19-19-19) / (3200Mbps 22-22-22) / (3200 Mbps 16-18-18) - DDR{ {12}}(3200Mbps 16-18-18) rov qab siv tau rau qis zaus.

TSEEM CEEB

Ceev	DDR 4-2133	DDR 4-2400	DDR 4-2666	DDR 4-3200	DDR 4-3200	DDR 4-3200	Chav tsev
Ceev	15-15-15	17-17-17	19-19-19	22-22-22	19-19-19	16-18-18	Chav tsev
TXC (min)	0.938	0.833	0.75	0.625	0.625	0.625	ns
CAS Latency	15	17	19	22	19	16	nCK
tRCD (min)	14.06	14.16	14.25	13.75	11.875	11.25	ns
tRP (min)	14.06	14.16	14.25	13.75	11.875	11.25	ns
TRAS (min)	33	32	32	32.5	30.0	22.5	ns
tRC (min)	47.06	46.16	46.25	46.25	41.875	33.75	ns

●JEDEC tus qauv 1.2V ± 0.06V Fais fab mov

●V_DDQ= 1.2V ± 0.06 V

●1067MHz f_CKrau 2133Mb/sec/pin, 1200MHz f_CKrau 2400Mb/sec/pin 1333MHz fCK rau 2666Mb/sec/pin, 1600MHz fCK rau 3200Mb/sec/pin

●16 Lub Txhab Nyiaj Txiag (4 Lub txhab nyiaj G roups)

●Programmable CAS Latency: 10 ,11,12,13,14,15,16,17,18,19,20,21,22

●Programmable Additive Latency (Posted CAS): 0, CL - 2, lossis CL - 1 moos

●Programmable CAS Sau Latency (CWL)=11,14 (DDR4-2133), 12,16 (DDR4-2400) thiab 14,18 (DDR4- 2666) • Tawg Ntev : 8, 4 nrog tCCD=4 uas tsis pub seamless nyeem los yog sau [xav ya siv A12 lossis MRS]

●Bi-directional Differential Data Strobe

●Ntawm Die Termination siv ODT tus pin

●Average Refresh Period 7.8us ntawm qis ces TCASE 85C, 3.9us ntawm 85C < TCASE  95C

● Asynchronous Pib dua

FUNCTION BLOCK DIAGRAM rau:

4GB, 512M x 64Module (Populated li 1rank ntawm x16DDR4 SDRAMs)

CEEB TOOM:

1) Tshwj tsis yog tau sau tseg, qhov ntsuas qhov ntsuas yog 150Ω 5 feem pua.

2) ZQ resistors yog 2400Ω 1 feem pua. Rau tag nrho lwm qhov tseem ceeb ntawm cov resistor xa mus rau daim duab kab hluav taws xob tsim nyog.

8GB, 1Gx64Module (Populated li 1rank ntawm x 8DDR4 SDRAMs)

Cim npe nrov: dram module, lag luam, nqe, ntau, OEM